SHD219303 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 892, REV. -
SHD219303
HERMETIC POWER MOSFET
N-CHANNEL
œ 200 VOLT, 0.4 OHM, 9.0A MOSFET
œ Fast Switching
œ Low R_{DS (on)}
œ Equivalent to IRFY230M
MAXIMUM RATINGS
ALL
RATINGS
ARE
AT
T
A
=
25•C
UNLESS
OTHERWISE
SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT
@ T_C = 25•C
I_D
-
-
9.0
Amps
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
36
Amps(pk)
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
TERMAL RESISTANCE JUNCTION TO CASE
R¡ _JC
-
-
1.27
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
98
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BV_DSS
200
V_GS = 0V, I_D = 1.0mA
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
V_GS(th)
2.0
DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10Vdc, I_D = 6.0A
R_DS(ON)
-
I_D = 9.0A
ZERO GATE VOLTAGE DRAIN CURRENT
-
V_DS = 0.8xMax. Rating, V_GS = 0Vdc
I_DSS
V_DS = 0.8xMax. Rating
V_GS = 0Vdc, T_J = 125•C
GATE TO BODY LEAKAGE CURRENT V_GS = –20Vdc,
I_GSS
-
-
-
-
4.0
-
0.4
0.49
-
25
250
-
–100
Volts
Volts
W
mA
nA
TOTAL GATE CHARGE
V_GS = 10 Vdc
GATE TO SOURCE CHARGE V_DS = 0.5V Max. Rating,
GATE TO DRAIN CHARGE
I_D = 9.0A
TURN ON DELAY TIME
V_DD = 100V,
RISE TIME
I_D = 9.0A,
TURN OFF DELAY TIME
R_G = 7.5W
FALL TIME
V_GS = 10V
FORWARD VOLTAGE T_J = 125•C, I_S = 9.0A, V_GS = 0V
REVERSE RECOVERY TIME
I_S = 9.0A,
REVERSE RECOVERY CHARGE di/dt ˆ 100A/msec,
V_DD ˆ 50V
INPUT CAPACITANCE
V_DS = 25 Vdc,
OUTPUT CAPACITANCE
V_GS = 0 Vdc,
REVERSE TRANSFER CAPACITANCE
f = 1 MHz
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
16
-
39
3.0
5.7
5.5
20
-
-
35
80
60
40
-
-
1.4
-
-
500
-
600
-
250
80
nC
nsec
Volts
nsec
pF
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