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SHD218602 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 863, REV -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 100 Volt, 0.020 Ohm MOSFET
• Isolated and Hermetically Sealed
• Surface Mount Package
SHD218602
SHD218602A
SHD218602B
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
A
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
±20
Volts
CONTINUOUS DRAIN CURRENT VGS=10V, TC = 25°C
ID
VGS=10V, TC = 100°C
PULSED DRAIN CURRENT
@ TC = 25°C
IDM
-
-
75
Amps
60
-
-
300
Amps
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
+150
°C
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ TC = 25°C
RθJC
-
-
0.30
°C/W
PD
-
-
300
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 250μA
DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 37.5A
VGS = 10V, ID = 37.5A, TJ = 125°C
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 1mA
FORWARD TRANSCONDUCTANCE
VDS ≥ 10V, ID = 75A
ZERO GATE VOLTAGE DRAIN CURRENT, TJ = 25°C
(VDS = 0.8xMax. Rating, VGS = 0V), TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
TOTAL GATE CHARGE
VGS = 10 V,
GATE TO SOURCE CHARGE
VDS = 50V,
GATE TO DRAIN CHARGE
ID =37.5A
TURN ON DELAY TIME
VDD = 250V,
RISE TIME
ID = 3.7A,
TURN OFF DELAY TIME
RG = 2.0Ω,
FALL TIME
VGS = 15V
DIODE FORWARD VOLTAGE
TJ = 25°C, IF =, IS
VGS = 0V
REVERSE RECOVERY TIME
TJ = 25°C,
IS = 10A,
di/dt ≤ = 100A/μsec,
REVERSE RECOVERY CHARGE
INPUT CAPACITANCE
OUTPUT CAPACITANCE
VGS = 0V, VDS = 25V,
f=1MHz
REVERSE TRANSFER CAPACITANCE
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
VSD
trr
Qrr
Ciss
Coss
Crss
100
-
-
-
-
0.02
0.035
2.0
-
4.0
25
-
-
-
-
250
1000
-
-
100
-100
-
180
260
36
70
85
160
-
20
30
40
40
50
75
20
40
-
-
1.3
-
-
200
1.4
-
4500
-
1600
800
Volts
Ω
Volts
S(1/Ω)
μA
nA
nC
nsec
Volts
nsec
μC
pF
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