SHD218513 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 747, REV. -
SHD218513
SHD218513A
SHD218513B
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 600 Volt, 0.60 Ohm, 11A MOSFET
• Isolated Hermetic Metal Package
• Fast Switching
• Low R_{DS (on)}
• Electrically Equivalent to IRFPC50
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
I_D
-
-
11
Amps
PULSED DRAIN CURRENT
@ T_C = 25°C
I_DM
-
-
44
Amps
OPERATING AND STORAGE TEMPERATURE
T_J/T_STG
-55
-
+150
°C
TOTAL DEVICE DISSIPATION
@ T_C = 25°C
P_D
-
-
430
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
R_θJC
-
-
0.29
°C/W
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 1.0 mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 6.0A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250μA
FORWARD TRANSCONDUCTANCE
V_DS = 100V,
I_DS = 6.0A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = Max. rating, V_GS = 0V
T_J = 25°C
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8 x Max. rating, V_GS = 0V
T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = 300V,
RISE TIME
I_D = 11A,
TURN OFF DELAY TIME
R_G = 6.2Ω
FALL TIME
DIODE FORWARD VOLTAGE
T_C = 25°C, I_S = 11A,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25°C,
I_F = 11A,
di/dt = 100A/μsec
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_GS = 0 V
V_DS = 25 V
f = 1.0MHz
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
600
-
-
-
-
0.60
2.0
-
4.0
5.7
-
-
-
-
100
-
-
500
-
-
100
-100
-
18
-
37
88
36
-
-
1.4
-
550
830
-
2700
-
300
61
Volts
Ω
Volts
S(1/Ω)
μA
μA
nA
nsec
Volts
nsec
pF
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