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SHD218508 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 2023, REV. -
Formerly Part Number SHD2188/A/B
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 1000 Volt, 2.0 Ohm, 5.6A MOSFET
• Hermetic Ceramic Package
• Fast Switching
• Low RDS (on)
• Similar to Part Type IRFAG50
SHD218508
SHD218508A
SHD218508B
MAXIMUM RATINGS
ALL
RATINGS
ARE
AT
T
C
=
25°C
UNLESS
OTHERWISE
SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
ID
-
-
5.6
Amps
ON-STATE DRAIN CURRENT TC = 100°C
PULSED DRAIN CURRENT
ID
-
-
3.5
Amps
IDM
-
-
22
Amps
OPERATING AND STORAGE TEMPERATURE
TJ/TSTG
-55
-
+150
°C
THERMAL RESISTANCE, JUNCTION TO CASE
RthJC
-
-
0.6
°C/W
TOTAL DEVICE DISSIPATION
PD
-
-
200
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 3.5A
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250mA
FORWARD TRANSCONDUCTANCE
VDS ≥ 15V, IDS = 3.5A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25°C
TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
TURN ON DELAY TIME
RISE TIME
VDD = 400V,
ID = 5.6A,
TURN OFF DELAY TIME
FALL TIME
RG = 2.35Ω
DIODE FORWARD VOLTAGE
IS = 5.6A, VGS = 0V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
REVERSE RECOVERY TIME
TJ = 25°C,
IF = 5.6A, VDD ≤ 50V,
di/dt = 100A/µsec
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
VGS = 0 V
VDS = 25 V
f = 1.0MHz
SYMBOL
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
td(ON)
tr
td(OFF)
tf
VSD
trr
Ciss
Coss
Crss
MIN.
1000
-
2.0
5.2
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
2400
240
80
MAX.
-
2.0
4.0
-
25
250
100
-100
30
44
210
60
1.8
1200
-
UNITS
Volts
Ω
Volts
S(1/ Ω )
µA
nA
nsec
Volts
nsec
pF
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