SHD218507 Datasheet, PDF (1/4 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4064, REV. -
Formerly part number SHD2187
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 900 Volt, 1.6-Ohm, 6.7A MOSFET
• Hermetic Package
• Fast Switching
• Low R_{DS (on)}
SHD218507
SHD218507A
SHD218507B
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
I_D
-
-
6.7
Amps
PULSED DRAIN CURRENT
I_DM
-
-
27
Amps
OPERATING AND STORAGE TEMPERATURE
T_J/T_STG
-55
-
+150
°C
TOTAL DEVICE DISSIPATION
P_D
-
-
160
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250
µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
4.0A
V_GS = 10V, I_D =
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250 µA
FORWARD TRANSCONDUCTANCE
4.0A
V_DS = 100V, I_D =
ZERO GATE VOLTAGE DRAIN CURRENT
125°C
V_DS = 0.8 x Max. rating, V_GS = 0V, T_J = 25°C
T_J =
GATE TO SOURCE LEAKAGE FORWARD
GATE TO SOURCE LEAKAGE REVERSE
TURN ON DELAY TIME
RISE TIME
V_GS = 20V
V_GS = -20V
V_DD = 450V
I_D =
6.7A
TURN OFF DELAY TIME
FALL TIME
6.2Ω
V_GS=10V
R_G =
DIODE FORWARD VOLTAGE
I_S = 6.7A, V_GS = 0V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2
%
REVERSE RECOVERY TIME
100V
T_J = 25°C,
IF=6.7A, V_DD =
SYMBOL
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
MIN.
1000
TYP.
-
MAX.
-
-
-
1.6
2.0
-
4.5
4.9
-
-
-
-
100
500
-
-
100
-100
- 20 34
-
130 37
-
-
1.8
-
610
920
UNITS
Volts
Ω
Volts
S(1/ Ω )
µA
nA
nsec
Volts
nsec
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