SHD218505 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1012, REV -
Formerly Part Number SHD2185/A/B
SHD218505
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 500 Volt, 0.3 Ohm, 9.0A MOSFET
• Low R_{DS (on)}
• Equivalent to IRF450 Series
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
A
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
±20
Volts
CONTINUOUS DRAIN CURRENT
@ T_C = 25°C
I_D
-
-
12
Amps
PULSED DRAIN CURRENT
@ T_C = 25°C
I_DM
-
-
48
Amps(pk)
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
°C
TERMAL RESISTANCE JUNCTION TO CASE
R_θJC
-
-
0.6
°C/W
TOTAL DEVICE DISSIPATION @ T_C = 25°C
P_D
-
-
200
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250μA
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250μA
DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10Vdc, I_D = 8.0A
PULSE TEST, t ≤ 300 μs, DUTY CYCLE d ≤ 2%
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8xMax. Rating, T_J = 25°C
SYMBOL
BV_DSS
V_GS(th)
R_DS(on)
I_DSS
MIN.
500
2.0
-
-
TYP.
-
-
-
-
MAX.
-
4.0
0.415
25
UNITS
Volts
Ω
μA
V_GS = 0Vdc, T_J = 125°C
GATE TO BODY LEAKAGE CURRENT V_GS = ±20Vdc,
V_DS = 0
TOTAL GATE CHARGE
GATE TO SOURCE CHARGE
GATE TO DRAIN CHARGE
V_GS = 10 Vdc
V_DS = 0.5VxMax. Rating,
I_D = 12A
TURN ON DELAY TIME
RISE TIME
TURN OFF DELAY TIME
FALL TIME
V_DD = 250V,
I_D = 12,
R_G = 2.35Ω
FORWARD VOLTAGE
I_S = 12A, V_GS = 0V
PULSE TEST, t ≤ 300 μs, DUTY CYCLE d ≤ 2%
REVERSE RECOVERY TIME
REVERSE RECOVERY CHARGE
I_F = 12A
di/dt = 100A/μsec
V_DD ≤ 50V
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_DS = 25 Vdc,
V_GS = 0 Vdc,
f = 1 MHz
DRAIN TO CASE CAPACITANCE
I_GSS
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
Q_RR
C_iss
C_oss
C_rss
C_DC
250
-
-
±100
55
-
120
5.0
19
27
70
-
-
35
190
170
130
-
-
1.7
-
1600
-
14
-
2700
-
600
240
12
mA
nA
nC
nsec
Volts
nsec
μC
pF
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