SHD218502 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 547, REV. -
Formerly Part Number SHD2182/A/B
HERMETIC POWER MOSFET
N-CHANNEL
SHD218502
SHD218502A
SHD218502B
FEATURES:
• 100 Volt, .055 Ohm, 38A MOSFET
• Isolated Hermetic Metal Package
• Fast Switching
• Low R_{DS (on)}
• Equivalent to IRFM150
MAXIMUM RATINGS
ALL
RATINGS
ARE
AT
T
C
=
25°C
UNLESS
OTHERWISE
SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
I_D
-
-
38
Amps
PULSED DRAIN CURRENT
@ T_C = 25°C
I_DM
-
OPERATING AND STORAGE TEMPERATURE
T_J/T_STG
-55
-
152
-
+150
Amps
°C
TOTAL DEVICE DISSIPATION @
T_C = 25°C
P_D
-
-
200
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
R_thJC
-
-
0.6
°C/W
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 1.0 mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 24A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250µA
FORWARD TRANSCONDUCTANCE
V_DS ≥ 15V,
I_DS = 24A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8 x Max. rating, V_GS = 0V
T_J = 25°C
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8 x Max. rating, V_GS = 0V
T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = 50V,
RISE TIME
TURN OFF DELAY TIME
FALL TIME
I_D = 38A,
R_G = 2.35Ω
DIODE FORWARD VOLTAGE
T_C = 25°C, I_S = 38A,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25°C,
I_F = 38A,
di/ds ≤ 100A/µsec, V_DD ≤ 50V
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
100
-
-
-
-
0.055
2.0
-
4.0
9.0
-
-
-
-
25
-
-
250
-
-
100
-100
-
-
35
190
170
130
-
-
1.8
-
-
500
-
3700
-
1100
200
Volts
Ω
Volts
S(1/ Ω )
µA
µA
nA
nsec
Volts
nsec
pF
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