SHD218501 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 303, REV. B
Formerly Part Number SHD2181/A/B
SHD218501
SHD218501A
SHD218501B
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 60 Volt, 0.027 Ohm, 45A MOSFET
• Isolated Hermetic Metal Package
• Fast Switching
• Low R_{DS (on)}
• Equivalent to IRFM054 Series
MAXIMUM RATINGS
ALL
RATINGS
ARE
AT
T
C
=
25°C
UNLESS
OTHERWISE
SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
V_GS = 10V
@ T_C = 25°C
I_D
@ T_C = 100°C
-
-
45
Amps
-
-
35
PULSED DRAIN CURRENT
@ T_C = 25°C
I_DM
-
-
220
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/ T_STG
-55
-
+150
°C
TOTAL DEVICE DISSIPATION @ T_C = 25°C
P_D
-
-
200
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 1.0mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 35A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250µA
FORWARD TRANSCONDUCTANCE
V_DS ≥ 15V, I_DS = 35A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8xMax. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = 30V,
RISE TIME
I_D = 35A,
TURN OFF DELAY TIME
R_G = 2.35Ω
FALL TIME
DIODE FORWARD VOLTAGE
T_C = 25°C, I_S = 35A,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25°C,
I_F = 35A,
di/ds ≤ 100A/µsec, V_DD ≤ 50V
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
THERMAL RESISTANCE, JUNCTION TO CASE
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
R_{t hJC}
60
-
-
-
-
0.027
2.0
-
4.0
20
-
-
-
-
25
250
-
-
100
-100
-
-
33
180
100
100
-
-
2.5
-
-
280
-
4600
-
2000
340
-
-
0.6
Volts
Ω
Volts
S(1/ Ω )
µA
nA
nsec
Volts
nsec
pF
°C/W
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