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SHD218414 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL
SENSITRON
SEMICONDUCTOR
SHD218414
SHD218414A
SHD218414B
TECHNICAL DATA
DATA SHEET 780, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 1000 Volt, 3.0 Ohm, 3A MOSFET
• Electrically Isolated, Hermetically Sealed
• Electrically Equivalent to MTC3N100E
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
A
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
±20
Volts
CONTINUOUS DRAIN CURRENT VGS=10V, TC = 25°C
ID
VGS=10V, TC = 100°C
-
-
3.0
Amps
2.4
PULSED DRAIN CURRENT
@ TC = 25°C
IDM
-
-
9.0
Amps
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
+150
°C
TERMAL RESISTANCE JUNCTION TO CASE
RθJC
-
-
0.89
°C/W
TOTAL DEVICE DISSIPATION @ TC = 25°C
PD
-
-
140
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 250μA
DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 1.5A
SYMBOL
BVDSS
RDS(ON)
MIN.
1000
-
TYP.
-
3.0
MAX.
-
4.0
UNITS
Volts
Ω
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250μA
FORWARD TRANSCONDUCTANCE
VDS = 15V, ID = 1.5A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = Max. Rating, VGS = 0V
VDS = Max. Rating
VGS = 0V, TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD VGS = -20V
GATE TO SOURCE LEAKAGE REVERSE VGS = 20V
TOTAL GATE CHARGE
VGS = 10V
GATE TO SOURCE CHARGE VDS = Max. Ratingx0.5
GATE TO DRAIN CHARGE
ID = 3.0A
TURN ON DELAY TIME
VDD = 400V,
RISE TIME
ID = 3.0A,
TURN OFF DELAY TIME
RG = 9.1Ω
FALL TIME
VGS = 10V
DIODE FORWARD VOLTAGE
TJ = 25°C, IS = 3.0A,
VGS = 0V
TJ = 125°C
DIODE REVERSE RECOVERY TIME
TJ = 25°C,
REVERSE RECOVERY CHARGE
IS = 3.0A,
diS/dt = -100A/μsec
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
VGS = 0 V,
VDS = 25 V,
f = 1.0MHz
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Ciss
Coss
Crss
2.0
-
4.0
2.0 3.56
-
-
-
10
100
-
-
-100
100
-
32.5
-
6.0
14.6
-
13
25
19
40
42
90
33
55
-
-
1.1
-
615
-
2.92
-
1316 1800
117 260
26
75
Volts
S(1/Ω)
μA
nA
nC
nsec
Volts
nsec
μC
pF
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