SHD217302A_09 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD217302A
TECHNICAL DATA
DATA SHEET 317, REV -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 100 Volt, 0.16 Ohm, 14A MOSFET
• Fast Switching
• Low R_{DS (on)}
• Equivalent to IRF130 Series
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
@ T_C = 100°C
I_D
-
-
14
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
°C
TOTAL DEVICE DISSIPATION @ T_C = 25°C
THERMAL RESISTANCE, JUNCTION TO CASE
P_D
-
-
96
Watts
R_thJC
-
-
1.3
°C/W
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 1.0mA
DRAIN TO SOURCE ON-STATE VOLTAGE
V_GS = 10V, I_D = 10A
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 20A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250μA
FORWARD TRANSCONDUCTANCE
V_DS ≥ I_{D (ON)} X, R_{DS (ON)} Max., I_DS = 0.6 X I_D
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = Max. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = 50V,
RISE TIME
I_D = 7.0A,
TURN OFF DELAY TIME
R_G = 12Ω,
FALL TIME
V_GS = 10V
DIODE FORWARD VOLTAGE
T_C = 25°C, I_S = 14A,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25°C,
I_f = 14A,
di_F/ds = 100A/μsec,
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
BV_DSS
V_DS(ON)
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
100
-
-
-
100
-
0.14 0.16
2.0
2.8
4.0
4.6
7.0
-
-
-
250
1000
-
-
100
-100
-
9.5
14
42
63
22
33
25
38
-
1.0
2.5
-
-
250
-
650
-
240
44
Volts
Volts
Ω
Volts
S(1/Ω)
μA
nA
nsec
Volts
nsec
pF
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