SHD126168 Datasheet, PDF (1/3 Pages) Sensitron – SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 100˚C Operating Temperature

SENSITRON
SEMICONDUCTOR
SHD126168
SHD126168D
SHD126168N
SHD126168P
TECHNICAL DATA
DATA SHEET 4779, REV. A
SILICON SCHOTTKY RECTIFIER
Ultra Low Reverse Leakage
Applications:
100•C Operating Temperature
œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode
Features:
œ Ultra low Reverse Leakage Current
œ Soft Reverse Recovery at Low and High Temperature
œ Very Low Forward Voltage Drop
œ Low Power Loss, High Efficiency
œ High Surge Capacity
œ Guard Ring for Enhanced Durability and Long Term Reliability
œ Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Max. Junction Temperature
Max. Storage Temperature
Thermal Resistance(single)
Thermal Resistance(Common
Cathode,Common, Anode
Doubler)
Symbol
V_RWM
I_F(AV)
I_F(AV)
I_FSM
T_J
T_stg
R _JC
R _JC
Condition
-
50% duty cycle, rectangular
wave form (Single/Doubler)
50% duty cycle, rectangular
wave form (Common
Cathode/Common Anode)
8.3 ms, half Sine wave
-
-
-
-
Max.
15
7.5
15
Units
V
A
A
75
-65 to +100
-65 to +100
1.36
2.71
A
•C
•C
•C/W
•C/W
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Max. Junction Capacitance
Symbol
V_F1
V_F2
I_R1
I_R2
C_T
Condition
@ 7.5A, Pulse, T_J = 25 •C
@ 7.5A, Pulse, T_J = 125 •C
@V_R = 15V, Pulse,
T_J = 25 •C
@V_R = 15V, Pulse,
T_J = 125 •C
@V_R = 5V, T_C = 25 •C
f_SIG = 1MHz,
V_SIG = 50mV (p-p)
Max.
0.46
0.42
3.5
170
600
Units
V
V
mA
mA
pF
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