SHD126134_08 Datasheet, PDF (1/3 Pages) Sensitron – SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200°C Operating Temperature

SENSITRON
SEMICONDUCTOR
SHD126134
SHD126134P
SHD126134N
SHD126134D
TECHNICAL DATA
DATASHEET 4754, REV. B
SILICON SCHOTTKY RECTIFIER
Ultra Low Reverse Leakage
Applications:
200°C Operating Temperature
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
• Ultra low Reverse Leakage Current
• Soft Reverse Recovery at Low and High Temperature
• Low Forward Voltage Drop
• Low Power Loss, High Efficiency
• High Surge Capacity
• Guard Ring for Enhanced Durability and Long Term Reliability
• Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Maximun Thermal Resistence
(Single)
Maximun Thermal Resistence
(Common Cathode, Common
Anode, Doubler)
Max. Junction Temperature
Max. Storage Temperature
Symbol
V_RWM
I_F(AV)
I_F(AV)
I_FSM
R_θJC
R_θJC
T_J
T_stg
Condition
-
Maximum DC Output Current
(@ T_C=100 ^OC) (Single,
Doubler)
Maximum DC Output Current
(@ T_C=100 ^OC) (Common
Cathode, Common Anode)
8.3 ms, half Sine wave
-
-
-
-
Max.
100
7.5
Units
V
A
15
A
75
A
2.71
°C/W
1.36
°C/W
-65 to +200 °C
-65 to +200 °C
Electrical Characteristics Per Leg:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Symbol
V_F1
V_F2
I_R1
I_R2
Max. Junction Capacitance
C_T
Condition
@ 7.5 A, Pulse, T_J = 25 °C
@ 7.5 A, Pulse, T_J = 125 °C
@V_R = 100 V, Pulse,
T_J = 25 °C
@V_R = 100 V, Pulse,
T_J = 125 °C
@V_R = 5V, T_C = 25 °C
f_SIG = 1MHz,
V_SIG = 50mV (p-p)
Max.
0.93
0.77
0.05
0.5
250
Units
V
V
mA
mA
pF
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