SHD126011 Datasheet, PDF (1/3 Pages) Sensitron – SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 150°C Operating Temperature

SENSITRON
SEMICONDUCTOR
SHD126011
SHD126011P
SHD126011N
SHD126011D
TECHNICAL DATA
DATASHEET 4745, REV. A
SILICON SCHOTTKY RECTIFIER
Ultra Low Reverse Leakage
Applications:
150°C Operating Temperature
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
• Ultra low Reverse Leakage Current
• Soft Reverse Recovery at Low and High Temperature
• Very Low Forward Voltage Drop
• Low Power Loss, High Efficiency
• High Surge Capacity
• Guard Ring for Enhanced Durability and Long Term Reliability
• Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Maximun Thermal Resistence
(Single)
Maximun Thermal Resistence
(Common Cathode, Common
Anode, Doubler)
Max. Junction Temperature
Max. Storage Temperature
Symbol
V_RWM
I_F(AV)
I_F(AV)
I_FSM
Condition
-
Maximum DC Output Current
(@ T_C=100 ^OC) (Single,
Doubler)
Maximum DC Output Current
(@ T_C=100 ^OC) (Common
Cathode, Common Anode)
8.3 ms, half Sine wave
R_θJC
-
R_θJC
-
T_J
-
T_stg
-
Max.
30
3.0
Units
V
A
6.0
A
55
A
6.35
°C/W
3.17
°C/W
-65 to +150
°C
-65 to +150
°C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Max. Junction Capacitance
Symbol
V_F1
V_F2
I_{R 1}
I_{R 2}
C_T
Condition
@ 3A, Pulse, T_J = 25 °C
@ 3A, Pulse, T_J = 125 °C
@V_R = 30V, Pulse,
T_J = 25 °C
@V_R = 30V, Pulse,
T_J = 125 °C
@V_R = 5V, T_C = 25 °C
f_SIG = 1MHz,
V_SIG = 50mV (p-p)
Max.
0.59
0.49
0.4
20
220
Units
V
V
mA
mA
pF
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