SHD125136 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER SCHOTTKY RECTIFIER

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 842, REV. A
SHD125136
SHD125136P
SHD125136N
SHD125136D
HERMETIC POWER SCHOTTKY RECTIFIER
Low Forward Voltage Drop
(200 V, 15 A)
Applications:
œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode
Features:
œ Soft Reverse Recovery at Low and High Temperature
œ Low Forward Voltage Drop
œ Low Reverse Leakage Current
œ Low Power Loss, High Efficiency
œ High Surge Capacity
œ Guard Ring for Enhanced Durability and Long Term Reliability
œ Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current (whole device)
Max. Average Forward
Current (whole device)
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
Non-Repetitive Avalanche
Energy (per leg)
Repetitive Avalanche
Current (per leg)
Max. Junction Temperature
Max. Storage Temperature
Symbol
V_RWM
I_F(AV)
I_F(AV)
I_FSM
Condition
-
50% duty cycle @T_C =100°C,
rectangular wave form
(Single & Doubler versions)
50% duty cycle @T_C =100°C,
rectangular wave form
(Common Cathode & Common
Anode versions)
8.3 ms, half Sine pulse
E_AS
T_J = 25 •C, I_AS = 0.5 A
L =60 mH
I_AR
I_AS decay linearly to 0 in 1 ms
‹ limited by T_J max V_A=1.5V_R
T_J
-
T_stg
-
Max.
200
7.5
15
75
7.5
0.5
-65 to +200
-65 to +200
Units
V
A
A
A
mJ
A
•C
•C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current
(per leg)
Max. Junction Capacitance
(per leg)
Maximum Thermal Resis.
(per leg)
Max. Reverse Recovery
Time
Symbol
V_F1
V_F2
I_R1
I_R2
C_T
R _JC
Condition
@ 7.5 A, Pulse, T_J = 25 •C
@ 7.5 A, Pulse, T_J = 125 •C
@V_R = 200V, Pulse,
T_J = 25 •C
@V_R = 200V, Pulse,
T_J = 125 •C
@V_R = 5V, T_C = 25 •C
f_SIG = 1MHz,
V_SIG = 50mV (p-p)
-
t_rr
I_F = 0.5 A, I_R = 1.0 A,
I_RM = 0.25 A, T_J = 25 •C
Max.
1.01
0.88
0.18
4.0
150
2.73
25
Units
V
V
mA
mA
pF
•C/W
nsec
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