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SHD123636P Datasheet, PDF (1/3 Pages) Sensitron – POWER SCHOTTKY RECTIFIER Low Reverse Leakage
SENSITRON
SEMICONDUCTOR
SHD123636P
SHD123636N
SHD123636D
TECHNICAL DATA
DATA SHEET 1042, REV. PRELIMINARY
POWER SCHOTTKY RECTIFIER
Low Reverse Leakage
Applications:
œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode
Features:
œ Ultra Low Reverse Leakage Current
œ Soft Reverse Recovery at Low and High Temperature
œ Very Low Forward Voltage Drop
œ Low Power Loss, High Efficiency
œ High Surge Capacity
œ Guard Ring for Enhanced Durability and Long Term Reliability
œ Guaranteed Reverse Avalanche Characteristics
œ Out Performs 200 Volt Ultra Fast Rectifiers
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche
Current
Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
Symbol
VRWM
IF(AV)
IF(AV)
IFSM
EAS
IAR
RthJC
TJ
Tstg
Condition
-
50% duty cycle, rectangular
wave form Common Cathode
(N)/Common Anode(P)
50% duty cycle, rectangular
wave form Doubler (D)
8.3 ms, half Sine wave
(per leg)
TJ = 25 •C, IAS = 1.3 A,
L = 40mH (per leg)
IAS decay linearly to 0 in 1 ms
‹ limited by TJ max VA=1.5VR
Per Package
-
-
Max.
200
150
Units
V
A
120
1650
27
1.3
0.2
-65 to +175
-65 to +175
A
A
mJ
A
•C/W
•C
•C
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 120A, Pulse, TJ = 25 •C
1.07
V
(per leg) measured at the leads
VF2
@ 120A, Pulse, TJ = 125 •C
0.91
V
(per leg) measured at the leads
Max. Reverse Current
IR1
@VR = 200V, Pulse,
0.6
mA
TJ = 25 •C (per leg)
IR2
@VR = 200V, Pulse,
TJ = 125 •C (per leg)
6.0
mA
Max. Junction Capacitance
CT
@VR = 5 V, TC = 25 •C
fSIG = 1 MHz,
VSIG = 50mV (p-p) (per leg)
1800
pF
Due to the nature of the 200V Schottky devices, some degradation in trr performance at high temperatures should
be expected, unlike conventional lower voltage Schottkys.
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