SHD118136_11 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Ultra Low Reverse Leakage

SENSITRON
SEMICONDUCTOR
SHD118136
SHD118136B
TECHNICAL DATA
DATA SHEET 913, REV. B
HERMETIC POWER SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Ultra Low Reverse Leakage
Applications:
Switching Power Supply Converters Free-Wheeling Diodes
Features:
Ultra Low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Maximum Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
Symbol
V_RWM
I_F(AV)
I_FSM
E_AS
I_AR
R _JC
T_J
T_stg
Condition
-
50% duty cycle, rectangular
wave form (per leg)
8.3 ms, half Sine wave
(per leg)
T_J = 25 C, I_AS = 0.4 A,
L = 40mH
I_AS decay linearly to 0 in 1 s
limited by T_J max V_A=1.5V_R
-
-
-
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current
(per leg)
Max. Junction Capacitance
(per leg)
Max. Reverse Recovery Time
Symbol
V_F1
V_F2
I_R1
I_R2
C_T
t_rr
Condition
@ 7.5A, Pulse, T_J = 25 C
@ 7.5A, Pulse, T_J = 125 C
@V_R = 200V, Pulse,
T_J = 25 C
@V_R = 200V, Pulse,
T_J = 125 C
@V_R = 5V, T_C = 25 C
f_SIG = 1MHz,
V_SIG = 50mV (p-p)
I_F = 0.5 A, I_R = 1.0 A,
I_RM = 0.25 A, T_J = 25 C
Polarity Protection Diode
Max.
200
7.5
140
7.7
0.4
3.2
-65 to +200
-65 to +200
Units
V
A
A
mJ
A
C/W
C
C
Max.
0.92
0.76
0.05
0.5
150
Units
V
V
mA
mA
pF
25
nsec
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