SHD118136_08 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER SCHOTTKY RECTIFIER

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 913, REV. A
SHD118136
SHD118136A
SHD118136B
HERMETIC POWER SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Ultra Low Reverse Leakage
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
• Ultra Low Reverse Leakage Current
• Soft Reverse Recovery at Low and High Temperature
• Very Low Forward Voltage Drop
• Low Power Loss, High Efficiency
• High Surge Capacity
• Guard Ring for Enhanced Durability and Long Term Reliability
• Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Maximum Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
Symbol
V_RWM
I_F(AV)
I_FSM
E_AS
I_AR
R_θJC
T_J
T_stg
Condition
-
50% duty cycle, rectangular
wave form (per leg)
8.3 ms, half Sine wave
(per leg)
T_J = 25 °C, I_AS = 0.4 A,
L = 40mH
I_AS decay linearly to 0 in 1 µs
ƒ limited by T_J max V_A=1.5V_R
-
-
-
Max.
200
7.5
140
7.7
0.4
0.85
-65 to +200
-65 to +200
Units
V
A
A
mJ
A
°C/W
°C
°C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current
(per leg)
Max. Junction Capacitance
(per leg)
Max. Reverse Recovery Time
Symbol
V_F1
V_F2
I_R1
I_R2
C_T
t_rr
Condition
@ 7.5A, Pulse, T_J = 25 °C
@ 7.5A, Pulse, T_J = 125 °C
@V_R = 200V, Pulse,
T_J = 25 °C
@V_R = 200V, Pulse,
T_J = 125 °C
@V_R = 5V, T_C = 25 °C
f_SIG = 1MHz,
V_SIG = 50mV (p-p)
I_F = 0.5 A, I_R = 1.0 A,
I_RM = 0.25 A, T_J = 25 °C
Max.
0.92
0.76
0.05
0.5
150
25
Units
V
V
mA
mA
pF
nsec
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