SHD114636 Datasheet, PDF (1/4 Pages) Sensitron – POWER SCHOTTKY RECTIFIER Low Reverse Leakage

SENSITRON
SEMICONDUCTOR
SHD114636
SHD114636A
SHD114636B
TECHNICAL DATA
DATA SHEET 4097, REV. A
POWER SCHOTTKY RECTIFIER
Low Reverse Leakage
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
• Ultra Low Reverse Leakage Current
• Soft Reverse Recovery at Low and High Temperature
• Very Low Forward Voltage Drop
• Low Power Loss, High Efficiency
• High Surge Capacity
• Guard Ring for Enhanced Durability and Long Term Reliability
• Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche
Current
Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
Symbol
V_RWM
I_F(AV)
I_F(AV)
I_FSM
E_AS
I_AR
R_thJC
T_J
T_stg
Condition
-
50% duty cycle, rectangular
wave form Common Cathode
(N)/Common Anode(P)
50% duty cycle, rectangular
wave form Doubler (D)
8.3 ms, half Sine wave
(per leg)
T_J = 25 °C, I_AS = 1.3 A,
L = 40mH (per leg)
I_AS decay linearly to 0 in 1 µs
ƒ limited by T_J max V_A=1.5V_R
Per Package
-
-
Max.
200
150
Units
V
A
120
1650
27
1.3
0.2
-65 to +175
-65 to +175
A
A
mJ
A
°C/W
°C
°C
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
V_F1
@ 120A, Pulse, T_J = 25 °C
0.95
V
(per leg) measured at the leads
V_F2
@ 120A, Pulse, T_J = 125 °C
0.79
V
(per leg) measured at the leads
Max. Reverse Current
I_{R 1}
@V_R = 200V, Pulse,
0.6
mA
T_J = 25 °C (per leg)
I_{R 2}
@V_R = 200V, Pulse,
6.0
mA
T_J = 125 °C (per leg)
Max. Junction Capacitance
C_T
@V_R = 5 V, T_C = 25 °C
1800
pF
f_SIG = 1 MHz,
V_SIG = 50mV (p-p) (per leg)
Due to the nature of the 200V Schottky devices, some degradation in t_rr performance at high temperatures should
be expected, unlike conventional lower voltage Schottkys.
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