SHD114546_08 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER SCHOTTKY RECTIFIER 200°C Maximum Operation Temperature

SENSITRON
SEMICONDUCTOR
SHD114546
SHD114546A
SHD114546B
TECHNICAL DATA
DATASHEET 1049, REV. A
HERMETIC POWER SCHOTTKY RECTIFIER
200°C Maximum Operation Temperature
Very Low Forward Voltage Drop
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
• Soft Reverse Recovery at Low and High Temperature
• Very Low Forward Voltage Drop
• Low Reverse Leakage Current
• Low Power Loss, High Efficiency
• High Surge Capacity
• Guard Ring for Enhanced Durability and Long Term Reliability
• Guaranteed Reverse Avalanche Characteristics
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C=100 ^OC)
I_O
MAXIMUM NONREPETITIVE FORWARD SURGE CURRENT
I_FSM
(t=8.3ms, Sine)
200 Volts
60 Amps
860 Amps
MAXIMUM THERMAL RESISTANCE (Junction to Mounting Surface, Cathode)
MAXIMUM JUNCTION TEMPERATURE RANGE
R_θJC
Top/Tstg
0.70
-65 to
+ 200
°C/W
°C
MAXIMUM STORAGE TEMPERATURE RANGE
Top/Tstg -65 to °C
+ 175
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP, Pulsed (I_f = 60 Amps)
T_J = 25 °C
T_J = 125 °C
V_f
0.95 Volts
0.79
MAXIMUM REVERSE CURRENT (I_r @ 200V PIV)
T_J = 25 °C
T_J = 125 °C
I_r
1.1
mA
24
MAXIMUM JUNCTION CAPACITANCE
(V_r =5V)
C_T
900
pF
*Due to the nature of the 200V Schottky devices, some degradation in t_rr performance at high temperatures should
be expected, unlike conventional lower voltage Schottkys.
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