SHD114546 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER SCHOTTKY RECTIFIER 200˚C Maximum Operation Temperature Very Low Forward Voltage Drop

SENSITRON
SEMICONDUCTOR
SHD114546
SHD114546A
SHD114546B
TECHNICAL DATA
DATA SHEET 1049, REV. –
HERMETIC POWER SCHOTTKY RECTIFIER
200•C Maximum Operation Temperature
Very Low Forward Voltage Drop
Applications:
œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode
Features:
œ Soft Reverse Recovery at Low and High Temperature
œ Very Low Forward Voltage Drop
œ Low Reverse Leakage Current
œ Low Power Loss, High Efficiency
œ High Surge Capacity
œ Guard Ring for Enhanced Durability and Long Term Reliability
œ Guaranteed Reverse Avalanche Characteristics
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ TC = 25 ^¡ C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ T_C=100 ^OC)
I_O
200 Volts
60 Amps
MAXIMUM NONREPETITIVE FORWARD SURGE CURRENT
(t=8.3ms, Sine)
I_FSM
860 Amps
MAXIMUM THERMAL RESISTANCE (Junction to Mounting Surface, Cathode)
R¢ _JC
0.35 •C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top/Tstg -65 to •C
+ 200
MAXIMUM STORAGE TEMPERATURE RANGE
Top/Tstg -65 to •C
+ 175
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP, Pulsed (I_f = 60 Amps)
T_J = 25 •C
T_J = 125 •C
V_f
0.95 Volts
0.79
MAXIMUM REVERSE CURRENT (I_r @ 200V PIV)
T_J = 25 •C
T_J = 125 •C
I_r
1.1
mA
24
MAXIMUM JUNCTION CAPACITANCE
(V_r =5V)
C_T
900
pF
*Due to the nature of the 200V Schottky devices, some degradation in t_rr performance at high temperatures should
be expected, unlike conventional lower voltage Schottkys.
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