SHB681123E_09 Datasheet, PDF (1/2 Pages) Sensitron – HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE

SENSITRON
SEMICONDUCTOR
SHB681123E
Technical Data
Datasheet 5015, Rev A
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL
WAVE BRIDGE
DESCRIPTION: 2500-VOLT, 20 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• 15000-VOLT HI-POT CAPABILITY
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
2500
Volts
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC) WHEN USED AS
I_O
A BRIDGE
20
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
I_FRM
80
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10μs, pulse) per leg, T_C = 25 ^OC
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
I_FSM
250
Amps
P_d
400
W
MAXIMUM THERMAL RESISTANCE, Junction to Case
R_θJC
0.2
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
Top, Tstg -55 to
°C
+200
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
MAXIMUM FORWARD VOLTAGE DROP (I_f = 20A PER LEG)V_f T_J=25 °C
T_J=150 °C
MAXIMUM REVERSE CURRENT (2500V PIV PER LEG) I_r T_J = 25 °C
T_J = 150 °C
MAXIMUM JUNCTION CAPACITANCE (V_r =5V) per leg
C_T
TOTAL CAPACITANCE CHARGE (V_R=2500V, I_F=5A, di/dt=500A/μs and
T_J=25°C) Q_C per leg
TYP
5.0
7.5
0.05
0.10
700
60
MAX.
5.50
9.00
0.40
2.00
N/A
UNITS
Volts
mA
pF
nC
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