SHB645052E_09 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC QUAD SILICON CARBIDE RECTIFIER

SENSITRON
SEMICONDUCTOR
SHB645052E
Technical Data
Datasheet 4287 REV. A
HERMETIC QUAD SILICON CARBIDE RECTIFIER
DESCRIPTION: FOUR 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIERS IN A HERMETIC
DUAL TO-257 PACKAGE. IDEAL FOR CONNECTION AS A BRIDGE.
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• CAN BE USED AS A SINGLE PHASE FULL WAVE BRIDGE BY EXTERNALLY CONNECTING
TWO PINS
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC) WHEN USED AS
I_O
A BRIDGE
10
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
I_FRM
30
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10μs, pulse) per leg, T_C = 25 ^OC
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
I_FSM
100
Amps
P_d
30
W
MAXIMUM THERMAL RESISTANCE, Junction to Case (Connected as a
R_θJC
BRIDGE)
1.0
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
Top, Tstg -55 to
°C
+200
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
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