SHB636053E Datasheet, PDF (1/2 Pages) Sensitron – HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE

SENSITRON
SEMICONDUCTOR
SHB636053E
Technical Data
Datasheet 4338, Rev A
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL
WAVE BRIDGE
DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• 15000-VOLT HI-POT CAPABILITY
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
2500
Volts
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC) WHEN USED AS
I_O
A BRIDGE
5
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10µs, pulse) per leg, T_C = 25 ^OC
MAXIMUM JUNCTION CAPACITANCE (V_r =5V) per leg
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
MAXIMUM THERMAL RESISTANCE, Junction to Case
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
I_FRM
30
Amps
I_FSM
100
Amps
C_T
P_d
R_θJC
Top, Tstg
240
100
0.5
-55 to
+150
pF
W
°C/W
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
MAXIMUM FORWARD VOLTAGE DROP (I_f = 5 A PER LEG) V_f T_J=25 °C
T_J=150 °C
MAXIMUM REVERSE CURRENT (2500V PIV PER LEG) I_r T_J = 25 °C
T_J = 150 °C
TOTAL CAPACITANCE CHARGE (V_R=2500V, I_F=5A, di/dt=500A/µs and
T_J=25°C) Q_C per leg
TYP
5
7.5
0.05
0.10
28
MAX.
5.50
9.00
0.40
2.00
N/A
UNITS
Volts
mA
nC
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