SHB601112E_09 Datasheet, PDF (1/3 Pages) Sensitron – SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE

SENSITRON
SEMICONDUCTOR
SHB601112E
TECHNICAL DATA, PROVISIONAL DATA ONLY
DATA SHEET 4289, Rev. B
SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE
DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE
BRIDGE IN A HERMETIC 5-PIN TO-258 (MO-078) PACKAGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT PER LEG
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine)
I_O
10
Amps
I_FRM
50
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
I_FSM
(t = 10μs, pulse)
250
Amps
MAXIMUM POWER DISSIPATION
P_d
80
W
MAXIMUM THERMAL RESISTANCE (Junction to Case)
R_θJC
0.50
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top, Tstg -55 to
°C
+200
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
MAXIMUM FORWARD VOLTAGE DROP I_f=10A PER LEG, T_J=25 °C
T_J=175 °C
MAXIMUM REVERSE CURRENT PIV = 1200V PER LEG, T_J = 25 °C
T_J = 175 °C
MAXIMUM JUNCTION CAPACITANCE PER LEG (V_r =400V)
C_T
TOTAL CAPACITIVE CHARGE PER LEG (V_R=1200V, I_F=10A,
di/dt=500A/μs and T_J=25°C) Q_C
TYP
1.60
2.50
0.01
0.02
70
60
MAX.
1.80
3.00
0.20
1.00
N/A
UNITS
Volts
mA
pF
nC
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