SHB601112E Datasheet, PDF (1/3 Pages) Sensitron – SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE

SENSITRON
SEMICONDUCTOR
SHB601112E
TECHNICAL DATA, PROVISIONAL DATA ONLY
DATA SHEET 4289, Rev. -
SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE
DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE
BRIDGE IN A HERMETIC 5-PIN TO-258 (MO-078) PACKAGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT PER LEG
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine)
I_O
10
Amps
I_FRM
50
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
I_FSM
(t = 10µs, pulse)
250
Amps
MAXIMUM JUNCTION CAPACITANCE PER LEG (V_r =400V)
MAXIMUM POWER DISSIPATION
MAXIMUM THERMAL RESISTANCE (Junction to Case)
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
C_T
P_d
R_θJC
Top, Tstg
70
80
0.50
-55 to
+200
pF
W
°C/W
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
MAXIMUM FORWARD VOLTAGE DROP I_f=10A PER LEG, T_J=25 °C
T_J=175 °C
MAXIMUM REVERSE CURRENT PIV = 1200V PER LEG, T_J = 25 °C
T_J = 175 °C
TOTAL CAPACITIVE CHARGE PER LEG (V_R=1200V, I_F=10A,
di/dt=500A/µs and T_J=25°C) Q_C
TYP
1.60
2.50
0.01
0.02
60
MAX.
1.80
3.00
0.20
1.00
N/A
UNITS
Volts
mA
nC
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