SHB601052G_09 Datasheet, PDF (1/3 Pages) Sensitron – SILICON CARBIDE 3-PHASE FULL WAVE BRIDGE

SENSITRON________
SEMICONDUCTOR
SHB601052G
Technical Data
Datasheet 4288 REV. A
SILICON CARBIDE 3-PHASE FULL WAVE BRIDGE
DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE 3-PHASE FULL WAVE BRIDGE IN A
HERMETIC 5-PIN TO-258 (MO-078) PACKAGE.
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC) PER LEG
I_O
5
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
I_FRM
30
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10μs, pulse) per leg, T_C = 25 ^OC
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
I_FSM
100
Amps
P_d
60
W
MAXIMUM THERMAL RESISTANCE, Junction to Case
R_θJC
0.6
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top, Tstg -55 to
°C
+200
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP (I_f = 5 A PER LEG) V_f T_J=25 °C
T_J=150 °C
MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) I_r T_J = 25 °C
T_J = 150 °C
JUNCTION CAPACITANCE (V_r =5V) per leg
C_T
TOTAL CAPACITANCE CHARGE (V_R=1200V, I_F=5A, di/dt=500A/μs and
T_J=25°C) Q_C per leg
1.65
2.55
0.05
0.10
450
28
1.80
3.00
0.20
1.00
N/A
Volts
mA
pF
nC
Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche
capabilities of the device are limited.
Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially
damaging conditions in their applications.
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