SHB601052G Datasheet, PDF (1/3 Pages) Sensitron – SILICON CARBIDE 3-PHASE FULL WAVE BRIDGE

SENSITRON
SHB601052G
Technical Data
Datasheet 4288 REV. –
SILICON CARBIDE 3-PHASE FULL WAVE BRIDGE
DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE 3-PHASE FULL WAVE BRIDGE IN A
HERMETIC 5-PIN TO-258 (MO-078) PACKAGE.
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC) PER LEG
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10µs, pulse) per leg, T_C = 25 ^OC
MAXIMUM JUNCTION CAPACITANCE (V_r =5V) per leg
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
MAXIMUM THERMAL RESISTANCE, Junction to Case
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
PIV
1200
Volts
I_O
5
Amps
I_FRM
30
Amps
I_FSM
100
Amps
C_T
P_d
R_θJC
Top, Tstg
450
60
0.6
-55 to
+175
pF
W
°C/W
°C
TYP
MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP (I_f = 5 A PER LEG) V_f T_J=25 °C
T_J=150 °C
MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) I_r T_J = 25 °C
T_J = 150 °C
TOTAL CAPACITANCE CHARGE (V_R=1200V, I_F=5A, di/dt=500A/µs and
T_J=25°C) Q_C per leg
1.65
2.55
0.05
0.10
28
1.80
3.00
0.20
1.00
N/A
Volts
mA
nC
Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche
capabilities of the device are limited.
Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially
damaging conditions in their applications.
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