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SHB601052FP_09 Datasheet, PDF (1/3 Pages) Sensitron – SILICON CARBIDE 3-PHASE HALF WAVE BRIDGE
SENSITRON__________
SEMICONDUCTOR
SHB601052FP
SHB601052FN
Technical Data
Datasheet 4290 REV. A
SILICON CARBIDE 3-PHASE HALF WAVE BRIDGE
DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE 3-PHASE HALF WAVE BRIDGE IN A
HERMETIC 5-PIN TO-258 (MO-078) PACKAGE.
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT (With TC = 65 OC) PER LEG
IO
5
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, TC = 25 OC
IFRM
30
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10μs, pulse) per leg, TC = 25 OC
MAXIMUM POWER DISSIPATION, TC = 25 OC
IFSM
100
Amps
Pd
30
W
MAXIMUM THERMAL RESISTANCE, Junction to Case
RθJC
1.2
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
Top, Tstg -55 to
°C
+200
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP (If = 5 A PER LEG) Vf TJ=25 °C
TJ=150 °C
MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) Ir TJ = 25 °C
TJ = 150 °C
MAXIMUM JUNCTION CAPACITANCE (Vr =5V) per leg
CT
1.65
2.55
0.05
0.10
450
1.80
3.00
0.20
1.00
Volts
mA
pF
TOTAL CAPACITANCE CHARGE (VR=1200V, IF=5A, di/dt=500A/μs and
28
TJ=25°C) QC per leg
N/A
nC
Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche
capabilities of the device are limited.
Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially
damaging conditions in their applications.
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