SHB601052E_08 Datasheet, PDF (1/3 Pages) Sensitron – Silicon Carbide Single Phase Full Wave Bridge

SENSITRON_________
SEMICONDUCTOR
SHB601052E
Technical Data
Datasheet 4308 REV. C
Silicon Carbide Single Phase Full Wave Bridge
DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE
IN A HERMETIC 5-LEAD TO-258 (MO-078) PACKAGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC) WHEN USED AS
I_O
A BRIDGE
10
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
I_FRM
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
I_FSM
(t = 10µs, pulse) per leg, T_C = 25 ^OC
MAXIMUM JUNCTION CAPACITANCE (V_r =5V) per leg
C_J
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
P_d
MAXIMUM THERMAL RESISTANCE, Junction to Case (Connected as a
R_θJC
BRIDGE)
30
Amps
100
Amps
450
pF
30
W
1.0
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top, Tstg -55 to
°C
+175
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
MAXIMUM FORWARD VOLTAGE DROP (I_f = 5 A PER LEG) V_f T_J=25 °C
T_J=150 °C
MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) I_r T_J = 25 °C
T_J = 150 °C
TOTAL CAPACITANCE CHARGE (V_R=1200V, I_F=5A, di/dt=500A/µs and
T_J=25°C) Q_C per leg
TYP
1.65
2.55
0.05
0.10
28
MAX.
1.80
3.00
0.20
1.00
N/A
UNITS
Volts
mA
nC
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