SHB601031E Datasheet, PDF (1/3 Pages) Sensitron – Silicon Carbide Single Phase Full Wave Bridge

SENSITRON_________
SEMICONDUCTOR
SHB601031E
Technical Data
Datasheet 5066, Rev. A
Silicon Carbide Single Phase Full Wave Bridge
DESCRIPTION: 600-VOLT, 4 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN
A HERMETIC 5-LEAD TO-258 (MO-078) PACKAGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ T_C = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
MAXIMUM DC OUTPUT CURRENT (With T_C = 65 ^OC) WHEN USED AS
I_O
A BRIDGE
600
Volts
8
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
I_FRM
(t = 8.3ms, Sine) per leg, T_C = 25 ^OC
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
I_FSM
(t = 10μs, pulse) per leg, T_C = 25 ^OC
MAXIMUM POWER DISSIPATION, T_C = 25 ^OC
P_d
MAXIMUM THERMAL RESISTANCE, Junction to Case (Connected as a
R_θJC
BRIDGE)
20
Amps
110
Amps
20
W
3.0
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
Top, Tstg -55 to
°C
+200
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
MAXIMUM FORWARD VOLTAGE (I_f = 4A PER LEG)
V_f T_J=25 °C
T_J=150 °C
MAXIMUM REVERSE CURRENT (600V PIV PER LEG) I_r T_J = 25 °C
T_J = 150 °C
JUNCTION CAPACITANCE (V_r =5V) per leg
C_J
TOTAL CAPACITANCE CHARGE (V_R=600V, I_F=4A, di/dt=500A/μs and
T_J=25°C) Q_C per leg
TYP
1.55
2.05
0.03
0.05
220
10
MAX.
1.90
2.45
0.20
0.50
N/A
UNITS
Volts
mA
pF
nC
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