SD275SE30A Datasheet, PDF (1/3 Pages) Sensitron – SILICON SCHOTTKY RECTIFIER DIE Ultra Low Forward Voltage Drop Typical Voltage Drop 0.30V

SENSITRON
SEMICONDUCTOR
SD275SE30A/B/C
TECHNICAL DATA
DATA SHEET 4142, Rev A
SILICON SCHOTTKY RECTIFIER DIE
Ultra Low Forward Voltage Drop
Typical Voltage Drop 0.30V
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
• Ultra Low Forward Voltage Drop
• Soft Reverse Recovery at Low and High Temperature
• Low Power Loss, High Efficiency
• Very High Surge Capacity
• Guard Ring for Enhanced Durability and Long Term Reliability
• Guaranteed Reverse Avalanche Characteristics
• Electrically / Mechanically Stable during and after Packaging
Maximum Ratings⁽¹⁾:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche
Current
Max. Junction Temperature
Max. Storage Temperature
Symbol
V_RWM
I_F(AV)
I_FSM
E_AS
I_AR
T_J
T_stg
Condition
-
50% duty cycle, rectangular
wave form
8.3 msec, sine pulse
T_J = 25 °C, I_AS = 3.7 A
L = 6.5 mH
I_AS decay linearly to 0 in 1 µs
ƒ limited by T_J max V_A=1.5V_R
-
-
Electrical Characteristics⁽¹⁾:
Characteristics
Symbol
Max. Forward Voltage Drop
V_F1
V_F2
V_F3
I_R1
Max. Reverse Current
I_R2
I_R3
Max. Junction Capacitance
C_T
(1) in SHD package
Condition
@ 120A, Pulse, T_J = 25 °C
@ 120A, Pulse, T_J = 125 °C
@ 120A, Pulse, T_J = 150 °C
@V_R = 30V, Pulse,
T_J = 25 °C
@V_R = 30V, Pulse,
T_J = 125 °C
@V_R = 5V, Pulse,
T_J = 100 °C
@V_R = 5V, T_C = 25 °C
f_SIG = 1MHz,
I_SIG = 50mV (p-p)
Max.
20
120
1650
44.5
3.7
-55 to + 150
-55 to + 150
Typ.
0.42
0.30
0.27
2.7
Max.
0.48
0.35
0.32
20.0
2240 3000
100 180
6684 8100
Units
V
A
A
mJ
A
°C
°C
Units
V
V
V
mA
mA
mA
pF
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