SD200SB100A Datasheet, PDF (1/3 Pages) Sensitron – SILICON SCHOTTKY RECTIFIER DIE Ultra Low Reverse Leakage

SENSITRON
SEMICONDUCTOR
SD200SB100A/B/C
TECHNICAL DATA
DATA SHEET 242, REV -
SILICON SCHOTTKY RECTIFIER DIE
Ultra Low Reverse Leakage
Applications:
œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode
Features:
œ Ultra low Reverse Leakage Current
œ Soft Reverse Recovery at Low and High Temperature
œ Very Low Forward Voltage Drop
œ Low Power Loss, High Efficiency
œ High Surge Capacity
œ Guard Ring for Enhanced Durability and Long Term Reliability
œ Guaranteed Reverse Avalanche Characteristics
œ Electrically / Mechanically Stable during and after packaging
œ Out Performs 100 Volt Ultrafast Rectifiers
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche
Current
Max. Junction Temperature
Max. Storage Temperature
Symbol
V_RWM
I_F(AV)
I_FSM
E_AS
I_AR
T_J
T_stg
Condition
-
50% duty cycle, rectangular
wave form
10 ms, Sine pulse ⁽¹⁾
T_J = 25 •C, I_AS = 1 A,
L = 30mH
I_AS decay linearly to 0 in 1 ms
‹ limited by T_J max V_A=1.5V_R
-
-
Max.
100
60
720
15
1
-55 to +175
-55 to +175
Units
V
A
A
mJ
A
•C
•C
Electrical Characteristics:
Characteristics
Symbol
Max. Forward Voltage Drop
V_F1
V_F2
Max. Reverse Current
I_R1
I_R2
Max. Junction Capacitance
C_T
(1) in SHD package
Condition
@ 60A, Pulse, T_J = 25 •C
@ 60A, Pulse, T_J = 125 •C
@V_R = 100V, Pulse,
T_J = 25 •C
@V_R = 100V, Pulse,
T_J = 125 •C
@V_R = 5V, T_C = 25 •C
f_SIG = 1MHz,
I_SIG = 50mV (p-p)
Max.
0.87
0.72
30
3.0
1500
Units
V
V
mA
mA
pF
œ 221 West Industry Court 3 Deer Park, NY 11729-4681 3 [phone] FAX [phone] œ
œ World Wide Web Site - http://www.sensitron.com œ E-Mail Address - [e-mail] œ