SD175SC100A Datasheet, PDF (1/4 Pages) Sensitron – SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop 200°C Operating Temperature

SENSITRON
SEMICONDUCTOR
SD175SC100A/B/C
TECHNICAL DATA
DATA SHEET 521, REV. A
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
Applications:
200°C Operating Temperature
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
• Soft Reverse Recovery at Low and High Temperature
• Very Low Forward Voltage Drop
• Low Power Loss, High Efficiency
• High Surge Capacity
• Guard Ring for Enhanced Durability and Long Term Reliability
• Guaranteed Reverse Avalanche Characteristics
• Electrically / Mechanically Stable during and after Packaging
• Out Performs 100 Volt Ultrafast Rectifiers
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Max. Junction Temperature
Max. Storage Temperature
Symbol
V_RWM
I_F(AV)
I_FSM
E_AS
I_AR
T_J
T_stg
Condition
-
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave ⁽¹⁾
T_J = 25 °C, I_AS = 0.75 A,
L = 40 mH
I_AS decay linearly to 0 in 1 µs
ƒ limited by T_J max V_A=1.5V_R
-
-
Max.
100
30
570
11.25
0.75
-65 to +200
-65 to +200
Units
V
A
A
mJ
A
°C
°C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Max. Junction Capacitance
(1) in SHD package
Symbol
V_F1
V_F2
I_R1
I_R2
C_T
Condition
@ 30A, Pulse, T_J = 25 °C
@ 30A, Pulse, T_J = 125 °C
@V_R = 100V, Pulse,
T_J = 25 °C
@V_R = 100V, Pulse,
T_J = 125 °C
@V_R = 5V, T_C = 25 °C
f_SIG = 1MHz,
V_SIG = 50mV (p-p)
Max.
0.84
0.68
750
15
1000
Units
V
V
µA
mA
pF
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