SD125SCU200A Datasheet, PDF (1/3 Pages) Sensitron – SILICON SCHOTTKY RECTIFIER DIE Ultra-low Reverse Leakage

SENSITRON
SEMICONDUCTOR
SD125SCU200A/B/C
TECHNICAL DATA
DATA SHEET 312, REV. A
SILICON SCHOTTKY RECTIFIER DIE
Ultra-low Reverse Leakage
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection
Diode
Features:
• Ultra Low Reverse Leakage Current
• Soft Reverse Recovery at Low and High Temperature
• Very Low Forward Voltage Drop
• Low Power Loss, High Efficiency
• High Surge Capacity
• Guard Ring for Enhanced Durability and Long Term Reliability
• Guaranteed Reverse Avalanche Characteristics
• Electrically / Mechanically Stable during and after Packaging
• Out Performs 200 Volt Ultra Fast Rectifiers
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Max. Junction Temperature
Max. Storage Temperature
Symbol
V_RWM
I_F(AV)
I_FSM
E_AS
I_AR
T_J
T_stg
Condition
-
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave ⁽¹⁾
T_J = 25 °C, I_AS = 0.6 A,
L = 40mH
I_AS decay linearly to 0 in 1 µs
ƒ limited by T_J max V_A=1.5V_R
-
-
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Max. Junction Capacitance
Max. Reverse Recovery
Time
(1) in SHD package
Symbol
V_F1
V_F2
I_R1
I_R2
C_T
t_rr
Condition
@ 15A, Pulse, T_J = 25 °C
@ 15A, Pulse, T_J = 125 °C
@V_R = 200V, Pulse,
T_J = 25 °C
@V_R = 200V, Pulse,
T_J = 125 °C
@V_R = 5V, T_C = 25 °C
f_SIG = 1MHz,
V_SIG = 50mV (p-p)
I_F = 0.5 A, I_R = 1.0 A,
I_RM = 0.25 A, T_J = 25 °C
Max.
200
15
280
11.4
0.6
-65 to +200
-65 to +200
Units
V
A
A
mJ
A
°C
°C
Max.
0.92
0.76
15
1.0
300
Units
V
V
µA
mA
pF
16
nsec
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