SD060SC200A Datasheet, PDF (1/3 Pages) Sensitron – SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop

SENSITRON
SEMICONDUCTOR
SD060SC200A/B
Technical Data
Data Sheet 4939, Rev.-
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
• Soft Reverse Recovery at Low and High Temperature
• Very Low Forward Voltage Drop
• Low Reverse Leakage Current
• Low Power Loss, High Efficiency
• High Surge Capacity
• Guard Ring for Enhanced Durability and Long Term Reliability
• Guaranteed Reverse Avalanche Characteristics
• Electrically / Mechanically Stable during and after Packaging
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Max. Junction Temperature
Max. Storage Temperature
Symbol
V_RWM
I_F(AV)
I_FSM
Condition
-
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave ⁽¹⁾
E_AS
T_J = 25 °C, I_AS = 0.23 A,
L = 40mH
I_AR
I_AS decay linearly to 0 in 1 µs
ƒ limited by T_J max V_A=1.5V_R
T_J
-
T_stg
-
Max.
200
3
55
4.9
0.23
-65 to +200
-65 to +200
Units
V
A
A
mJ
A
°C
°C
Electrical Characteristics⁽¹⁾:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Max. Junction Capacitance
Max. Reverse Recovery Time
(1) in SHD package
Symbol
V_F1
V_F2
I_R1
I_R2
C_T
t_rr
Condition
@ 3A, Pulse, T_J = 25 °C
@ 3A, Pulse, T_J = 125 °C
@V_R = 200V, Pulse,
T_J = 25 °C
@V_R = 200V, Pulse,
T_J = 125 °C
@V_R = 5V, T_C = 25 °C
f_SIG = 1MHz,
V_SIG = 50mV (p-p)
I_F = 0.5 A, I_R =1.0 A,
I_RM = 0.25 A, T_J = 25 °C
Max.
0.92
0.76
70
1.6
60
9
Units
V
V
µA
mA
pF
nsec
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