SCP-5115 Datasheet, PDF (1/3 Pages) Sensitron – Hermetic Half Bridge IGBT Module 600V, 800A

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
PART NUMBER: SCP-5115, REV. -
SCP-5115
Hermetic Half Bridge -- IGBT Module
600V, 800A
Features:
• Hermetic Core Construction
• Increased Creepage and Clearance Distances for High Altitude operation
• Built-in RTD for accurate Temperature sense
• High Frequency Switching
• Operation at Temperature Extremes
• Internal Layout with Minimized Stray Inductances
Maximum Ratings
Symbol
All ratings are at T_A = 25^oC unless otherwise specified.
Test Conditions
Value
Units
V_ces
Vge = 0V
600
V
I_c
Tc = 25C / 70C
800 / 500
A
I_cpulse
Tj = 25C / 125C, 10kHz, D=.05
1400 / 800
A
V_GE
+ / - 20
V
Hipot
1500Vrms, 50Hz / 60Hz, 1 min.
T_j
-55 to 150
°C
Diode
I_F
Tc = 25C / 70C
800 / 500
A
I_FM
Tj = 25C / 125C, 10kHz, D=.05
1400 / 800
A
Electrical Characteristics
All ratings are at T_A = 25^oC unless otherwise specified.
Symbol Test Conditions
Min.
Typ.
Max.
Units
V_CE(sat)
Vge = 15V, pulsed
ton = 100us, f = 10Hz
Ic = 450A Tc = 25C
-
1.9
2.3
V
V_GE(th)
Ic = 4mA, Vge = Vce
4.5
-
6.0
V
I_CES
Vce = 600V, Vge = 0V
-
-
3.0
mA
I_GES
Vce = 0V, Vge = 20V
-
Vce = 0V, Vge = 20V, Tc=125C
-
600
nA
20
mA
Ets
Total Switching Energy
Vge = 15V
-
30
-
mJ
Vcc = 300V, Ic = 450A,
C_iss
Vce = 25V
C_oss
Vge = 0V
C_rss
f = 1MHz
-
42
-
8.2
-
7
-
nF
-
nF
-
nF
t_d(on)
Vce = 300V
t_r
Ic = 450A
t_d(off)
Vge = + / - 15V
t_f
Rg = 1.0 Ohm
-
120
180
ns
-
100
220
ns
-
375
750
ns
-
150
320
ns
Diode
V_F
I_F = 450A
-
1.4
1.7
V
t_RR
I_F = 450A; V_R =300V,
di/dt=1000A/usec
-
-
150
ns
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