SCP-4979 Datasheet, PDF (1/2 Pages) Sensitron – HV IGBT Solid-State Switch

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 1137, REV.D
HV IGBT Solid-State Switch
Data Sheet
SCP-4979
DESCRIPTION: 12000 VOLT, 1.0 AMP, INDUSTRIAL IGBT Solid-state Switch
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Collector-to-Emitter Breakdown Voltage for
each one of Q1,2,3,4
Collector-to-Emitter Leakage Current
V _(BR)CES
I_CES
Continuous Collector Current
I_C
Maximum Pulsed Collector Current, 5µ sec
I_CM
(AT Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
CONDITION
MIN
TYP
MAX
UNIT
V_GE=0V,I_C=0.5 mA,
T_j = 25 ^oC
2900⁽¹⁾
-
V_GE=0V,
-
-
V_CE=2500V, T_j = 25 ^oC
V_CE=2000V, T_j = 125 ^oC⁽¹⁾
V_GE=10V
T_C = 25 ^oC
-
-
-
-
-
V
0.5
mA
2
1 ⁽²⁾
A
100
A
Gate-Source Threshold Voltage
V _GS(th)
Gate Input Capacitance
Collector-to-Emitter Saturation Voltage for
each one of Q1,2,3,4
Junction to Base Thermal Resistance
Nominal Gate-to-Emitter Zener Breakdown
Voltage, I_Z = 1mA
Series Zener Breakdown Voltage, I_Z = 1mA
Operating and Storage Junction
Temperature
Operating Case Temperature
Pin-To-Base plate Voltage Isolation
C_iSS
V_CEsat
R_thjc
V_Z
Vz
T_j
T_j
V_iso
V_CE = V_GE
I_C = 1mA
V_CE = 25 V
V_GE = 15 V, I_C = 2.0 A
1 minute, at sea level
5.0
-
-
17.5
11.0
-40
-40
-
12.5
18.5
11.5
7.5
-
0.8
1.0
19.0
12.5
100
100
10000
V
nF
V
o_C/W
V
V
o_C
o_C
V
HV TVS CHARACTERISTICS
PARAMETER
BD Voltage
Clamping Voltage
SYMBOL
V_BD
V _CE(CL)
CONDITION
I_C = 0.50 mA
I_C = 2 mA
MIN
2500
2600
TYP
2600
2700
MAX
2700
2900
UNIT
V
V
Notes,
1- Guaranteed by design. To be tested at room temperature only.
2- Collector current is limited by the rating of the 12.5 Ω power resistors. IGBT actual current rating is 15A.
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