SCP-4926 Datasheet, PDF (1/3 Pages) Sensitron – HV MOSFET Power Module Data Sheet

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 1138, REV. D
HV MOSFET Power Module
Data Sheet
SCP-4926
DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
POWER MOSFETS Q1,…,6
Drain-to-Source Breakdown Voltage for
each one of Q1,2,…,6
Drain-to-Source Leakage Current
V _(BR)DSS
I_DSS
Continuous Drain Current
I_D
Maximum Pulsed Drain Current ⁽¹⁾
I_DM
(AT Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
CONDITION
MIN
TYP
MAX
UNIT
V_GS=0V,I_D=0.5 mA,
T_j = 25 ^oC
1000
-
V_GS=0V,
-
-
V_DS=1000V, T_j = 25 ^oC
V_DS=1000V, T_j = 125 ^oC
V_GS=10V
T_C = 25 ^oC
-
-
-
-
-
V
0.250
mA
2
1
A
4
A
Gate-Source Threshold Voltage
V _GS(th)
Static Drain-to-Source On Resistance
R_DS
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Cap.
C_rss
Total Gate Charge
Q_G
Turn-on Delay
t_d(on)
Rise Time
t_r
Turn-off Delay
t_d(off)
Fall Time
t_f
Junction to Base Thermal Resistance
R_thjc
Nominal Gate-to-source Zener Breakdown V_Z
Voltage, I_Z = 1mA
Operating and Storage Junction T_j
Temperature
V_DS = V_GS
I_D = 0.50mA
V_GS = 10 V, I_D = 0.80 A
V_DS = 25 V, V_GS = 0 V,
f = 1 MHz
V_GS = 10 V, I_D = 1 A,
V_DD = 400 V
V_DD = 500 V, V_GS = 10 V,
I_D = 1.0 A
Operating Case Temperature
T_j
Pin-To-Base plate Voltage Isolation
V_iso
DIODE CHARACTERISTICSD1, D2, D3
1 minute, at sea level
Forward Voltage
V_F
I_F = 1A
Reverse Recovery Time
t_rr
T_j = 25 ^oC, I_F = 1 A,
di/dt = 50 A/ µs, V_rr=400V
GATE DRIVE MOSFETs Q7,…,18 ⁽¹⁾ CHARACTERISTICS
Turn-On Time
t_on
Turn-Off Time
t_off
Notes,
1- Type 2N7002 or similar.
2.0
-
-
-
±17.5
-40
-40
-
-
-
-
-
500
52
17
10
17
58
31
±18.0
-
-
-
-
4.0
11.0
-
38
-
3.7
±19.0
100
100
10,000
1.1
150
20
20
V
Ω
pF
nC
ns
o_C/W
V
o_C
o_C
V
V
ns
ns
ns
• 221 West Industry Court 3 Deer Park, NY 11729-4681 3 Phone [phone] Fax [phone] •
• World Wide Web Site - www.sensitron.com • E-Mail Address - [e-mail] •