PFC3M-10000 Datasheet, PDF (1/5 Pages) Sensitron – 10 KW, 3 Phase Module For Active Power Factor Correction

SENSITRON
SEMICONDUCTOR
PRELIMINARY TECHNICAL DATA
DATA SHEET 4173, REV. A
10 KW, 3 Phase Module
For
Active Power Factor Correction
PFC3M-10000
• 3 Phase Single Package
• IGBT Switching, 600V, 40A, VCE (on) =2.1V
• FRED Diodes, 600V, 25A, trr=23ns, Qrr =112nC
• High Current Terminals
• Low profile
• Latest Generation IGBT Technology
• -55 to +150^OC
• Access to all IGBT Leads
• Easy Heat Sink Mounting
• Cost Effective
• Large Surface Area
• Low Inductance
ELECTRICAL CHARACTERISTICS
PARAM ETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I_C = 250 µA, V_GE = 0V
Continuous Collector Current
Pulsed Collector Current, 1mS
Gate to Emitter Voltage
T_C = 25 ^OC
T_C = 100 ^OC
Gate-Emitter Leakage Current, V_GE = +/-20V
Gate Threshold Voltage, I_C=2mA
(Tj=25⁰C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN TYP MAX
UNIT
BV_CES
I_C
I_CM
V_GE
I_GES
V_GE(TH)
600
-
-
V
-
-
40
A
20
-
-
160
A
-
-
+/-20
V
-
-
+/- 100
nA
3.0
-
6.0
V
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