MURC805 Datasheet, PDF (1/6 Pages) Sensitron – MURC805-MURC860 Ultrafast Silicon Die

SENSITRON
SEMICONDUCTOR
MURC805-MURC860
Data Sheet 4858, Rev.-
Technical Data
Applications:
MURC805-MURC860
Ultrafast Silicon Die
• Switching Power Supply • General Purpose • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
•
•
•
•
•
Glass-Passivated
Epitaxial Construction.
Low Reverse Leakage Current
High Surge Current Capability
Low Forward Voltage Drop
Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Rectified Forward
Current Total Device,(Rated V_R),
T_C = 150°C
Peak Repetitive Forward Current
(Rated V_R, Squre Wave,20KHz),
T_C = 150°C
Max. Peak One Cycle Non-
Repetitive Surge Current
8.3 ms, half Sine pulse
Operating JunctionTemperature
and Storage Temperature
Symbol
V_RWM
I_F(AV)
MURC
805
50
MURC
810
100
MURC MURC
815
820
150
200
8.0
MURC
840
400
MURC
860
600
Unit
V
A
I_FM
16
A
I_FSM
100
A
T_J, T_stg
-65 to +175
°C
Electrical Characteristics:
Characteristics
Symbol
Max. Forward Voltage Drop(Note1)
V_F
(I_F = 8.0 Amp, T_J = 150 °C)
(I_F = 8.0 Amp, T_J = 25 °C)
Max. Reverse Current (Note1)
I_R
(Rated DC Voltage, T_J = 150 °C)
(Rated DC Voltage, T_J = 25 °C)
Max. Junction Capacitance
C_T
@V_R = 5V, T_C = 25 °C
f_SIG = 1MHz, V_SIG = 50mV (p-p)
Max Reverse Recovery Time
t_rr
(I_F = 1.0 Amp, di/dt = 50 A/µs)
(I_F = 0.5 Amp, I_R = 1.0 A,
I_REC=0.25A)
1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2%
MURC
805
MURC MURC MURC
810
815
820
0.895
0.975
250
5.0
240
35
25
MURC MURC
840
860
1.00 1.20
1.30 1.50
500
10
60
50
Unit
V
µA
pF
nS
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