MURC1510 Datasheet, PDF (1/6 Pages) Sensitron – MURC1510-MURC1560 Ultrafast Silicon Die

SENSITRON
SEMICONDUCTOR
MURC1510-MURC1560
Technical Data
Data Sheet 4861, Rev.-
Applications:
MURC1510-MURC1560
Ultrafast Silicon Die
• Switching Power Supply • General Purpose • Free-Wheeling Diodes • Polarity Protection
Diode
Features:
• Glass-Passivated
• Epitaxial Construction.
• Low Reverse Leakage Current
• High Surge Current Capability
• Low Forward Voltage Drop
• Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics
Symbol MURC MURC MURC MURC
MURC
Unit
1510 1515 1520 1540
1560
Peak Inverse Voltage
V_RWM
100 150 200 400
600
V
Average Rectified Forward
Current(Rated V_R)
I_F(AV)
15 @ T_C = 150°C
15 @ T_C =
A
145°C
Peak Rectified Forward
I_FRM
Current(Rated V_R, Square Wave, 20
kHz)
30 @ T_C = 150°C
30 @ T_C =
A
145°C
Max. Peak One Cycle Non-Repetitive
I_FSM
200
Surge Current
8.3 ms, half Sine pulse
150
A
Operating JunctionTemperature and
T_J, T_stg
-65 to +175
°C
Storage Temperature
Electrical Characteristics:
Characteristics
Symbol MURC MURC MURC MURC
MURC
Unit
1510 1515 1520 1540
1560
Max. Instantaneous Forward Voltage
V_F
V
(Note1)
(I_F = 15 Amp, T_J = 150 °C)
(I_F = 15 Amp, T_J = 25 °C)
0.85
1.12
1.20
1.05
1.25
1.50
Max. Instantaneous Reverse Current
I_R
µA
(Note1)
(Rated DC Voltage, T_C = 150 °C)
(Rated DC Voltage, T_C = 25 °C)
500
500
1000
10
10
10
Max. Junction Capacitance
C_T
@V_R = 5V, T_C = 25 °C
f_SIG = 1MHz, V_SIG = 50mV (p-p)
Max Reverse Recovery Time
t_rr
(I_F = 1.0 Amp, di/dt = 50 A/µs)
(I_F = 0.5 Amp, I_R = 1.0 A, I_REC=0.25A)
240
pF
nS
35
60
25
50
1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%
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