MURC1060 Datasheet, PDF (1/3 Pages) Sensitron – MURC1060 Ultrafast Silicon Die

SENSITRON
SEMICONDUCTOR
MURC1060
Technical Data
Data Sheet 4860, Rev.-
Applications:
MURC1060
Ultrafast Silicon Die
• Switching Power Supply • General Purpose • Free-Wheeling Diodes • Polarity Protection
Diode
Features:
• Glass-Passivated
• Epitaxial Construction.
• Low Reverse Leakage Current
• High Surge Current Capability
• Low Forward Voltage Drop
• Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Max. Peak One Cycle Non-
Repetitive Surge Current
Symbol
V_RWM
I_F(AV)
I_FSM
Condition
-
50% duty cycle @T_C =100°C,
rectangular wave form
8.3 ms, half Sine pulse
Max.
600
10
60
Units
V
A
A
Max. Junction Capacitance
Max. Junction Temperature
Max. Storage Temperature
C_J
@V_R = 5V, T_C = 25 °C
f_SIG = 1MHz,
V_SIG = 50mV (p-p)
T_J
-
T_stg
-
240
pF
-65 to +150
°C
-65 to +150
°C
Electrical Characteristics:
Characteristics
Symbol
Condition
Max. Forward Voltage Drop *
V_F1 @ 10A, Pulse, T_J = 25 °C
Max.
2.2
Units
V
V_F2 @ 10A, Pulse, T_J = 100 °C
2.0
V
Max. Reverse Current *
I_R1
@V_R = rated VR
T_J = 25 °C
I_R2
@V_R = 0.8VR
T_J = 100 °C
5
µA
50
µA
Max Reverse Recovery Time
t_rr
I_F=0.5A, I_R=1.0A, I_REC=0.25A
50
nS
Max Reverse Recovery Time
t_rr
I_F=10A, di/dt=200A/µs
90
nS
* Pulse Width < 300µs, Duty Cycle <2%
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