2SA1832_03 Datasheet, PDF (1/3 Pages) Sensitron – Audio Frequency General Purpose Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832
2SA1832
Audio Frequency General Purpose Amplifier Applications
Unit: mm
· High voltage and high current: VCEO = −50 V, IC = −150 mA (max)
· Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)
= 0.95 (typ.)
· High hFE: hFE = 70~400
· Complementary to 2SC4738
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
-50
V
-50
V
-5
V
-150
mA
-30
mA
100
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = -50 V, I_E = 0
I_EBO
V_EB = -5 V, I_C = 0
h_FE
(Note)
V_CE = -6 V, I_C = -2 mA
V_{CE (sat)}
f_T
C_ob
I_C = -100 mA, I_B = -10 mA
V_CE = -10 V, I_C = -1 mA
V_CB = -10 V, I_E = 0, f = 1 MHz
Note: h_FE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Min Typ. Max Unit
¾
¾ -0.1 mA
¾
¾ -0.1 mA
70
¾
400
¾ -0.1 -0.3
V
80
¾
¾ MHz
¾
4
7
pF
Marking
1
2003-03-27