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2N7225 Datasheet, PDF (1/3 Pages) Microsemi Corporation – N-CHANNEL MOSFET
SENSITRON
SEMICONDUCTOR
2N7225
TECHNICAL DATA
DATA SHEET 271, REV. A
HERMETIC POWER MOSFET
N-CHANNEL
DESCRIPTION: 200 VOLT, 0.105 OHM, 27.4 A MOSFET IN A HERMETIC TO-254 PACKAGE.
(add suffix S for up-screening to JTX Level – 2N7225S)
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
A
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
±20
Volts
CONTINUOUS DRAIN CURRENT VGS=10V, TC = 25°C
ID
VGS=10V, TC = 100°C
-
-
27.4
Amps
17
PULSED DRAIN CURRENT
@ TC = 25°C
IDM
-
-
110
Amps
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
150
°C
TERMAL RESISTANCE JUNCTION TO CASE
RθJC
-
-
0.83
°C/W
TOTAL DEVICE DISSIPATION @ TC = 25°C
PD
-
-
150
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0mA
DRAIN TO SOURCE ON STATE RESISTANCE
GATE THRESHOLD VOLTAGE
250μA
VGS = 10V, ID = 17A
VGS = 10V, ID = 27.4A
VDS = VGS, ID =
FORWARD TRANSCONDUCTANCE
VDS ≥ 15V, IDS = 17A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8xMax. Rating, VGS = 0V
VDS = 0.8xMax. Rating
VGS = 0V, TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD @ RATED
GATE TO SOURCE LEAKAGE REVERSE
VGS
TOTAL GATE CHARGE
VGS = 10 VOLTS
GATE TO SOURCE CHARGE
50% RATED
VDS
GATE TO DRAIN CHARGE
TURN ON DELAY TIME
RISE TIME
TURN OFF DELAY TIME
FALL TIME
RATED ID
VDD = 100V
RATED ID
RG = 2.35Ω
DIODE FORWARD VOLTAGE
27.4A,
TJ = 25°C, IS =
DIODE REVERSE RECOVERY TIME
REVERSE RECOVERY CHARGE
VGS = 0V
TJ = 25°C
If = RATED ID
di/dt =
100A/sec
INPUT CAPACITANCE
OUTPUT CAPACITANCE
VGS = 0 VOLTS
VDS = 25 VOLTS
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(ON)
tr
td(ON)
tf
VSD
trr
Qrr
Ciss
Coss
200
-
-
-
-
0.100
0.105
2.0
-
4.0
9.0
-
-
-
-
25
250
-
-
100
-100
55
-
115
8.0
22
30
60
-
-
35
190
170
130
-
-
1.9
-
-
950
9.0
-
3500
-
700
Volts
Ω
Volts
S(1/Ω)
μA
nA
nC
nsec
Volts
nsec
μC
pF
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