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2N7224 Datasheet, PDF (1/3 Pages) Seme LAB – N-CHANNEL POWER MOSFET
SENSITRON
SEMICONDUCTOR
2N7224
TECHNICAL DATA
DATA SHEET 161, REV -
(see also data sheet 766)
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 100 Volt, 0.07 Ohm MOSFET
œ Isolated and Hermetically Sealed
œ Simple Drive Requirements
œ Repetitive Avalanche Rating
MAXIMUM RATINGS
ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT VGS=10V, TC = 25•C
ID
VGS=10V, TC = 100•C
-
-
34
Amps
21
PULSED DRAIN CURRENT
@ TC = 25•C
IDM
-
-
136
Amps
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
150
•C
TERMAL RESISTANCE JUNCTION TO CASE
R¡ JC
-
-
0.83
•C/W
TOTAL DEVICE DISSIPATION @ TC = 25•C
PD
-
-
150
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0mA
DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 21A
VGS = 10V, ID = 34A
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250mA
FORWARD TRANSCONDUCTANCE
VDS ˜ 15V, IDS = 21A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8xMax. Rating, VGS = 0V
VDS = 0.8xMax. Rating
VGS = 0V, TJ = 125•C
GATE TO SOURCE LEAKAGE FORWARD @ RATED
GATE TO SOURCE LEAKAGE REVERSE
VGS
TOTAL GATE CHARGE
VGS = 10 VOLTS
GATE TO SOURCE CHARGE
50% RATED VDS
GATE TO DRAIN CHARGE
RATED ID
TURN ON DELAY TIME
VDD = 50V
RISE TIME
RATED ID
TURN OFF DELAY TIME
RG = 2.35W
FALL TIME
DIODE FORWARD VOLTAGE
TJ = 25•C, IS = 34A,
VGS = 0V
DIODE REVERSE RECOVERY TIME
REVERSE RECOVERY CHARGE
TJ = 25•C
If = RATED ID
di/dt = 100A/sec
INPUT CAPACITANCE
VGS = 0 VOLTS
OUTPUT CAPACITANCE
VDS = 25 VOLTS
REVERSE TRANSFER CAPACITANCE
f = 1 MHz
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(ON)
tr
td(ON)
tf
VSD
trr
Qrr
Ciss
Coss
Crss
100
-
-
-
-
0.07
0.081
2.0
-
4.0
9.0
-
-
-
-
25
250
-
-
100
-100
50
-
125
8
22
15
65
-
-
35
190
170
130
-
-
1.8
-
-
500
2.9
-
3700
-
1100
200
Volts
W
Volts
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
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