1N6510 Datasheet, PDF (1/3 Pages) Microsemi Corporation – MONOLITHIC AIR ISOLATED DIODE ARRAY

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4207, REV. -
Isolated Diode Array
Applications:
 High Frequency Data Lines
 RS-323 & RS-432 Networks
 LAN, Ethernet, I/O Ports
 IEC61000-4 compatible for ESD / EFT / Surge
Features:
 Protects up to 8 I/O Ports
 Isolated diodes eliminate crosstalk
 High Density Packaging
 High Breakdown Voltage; High Speed Switching (< 10 nsec)
 Low Capacitance; Low Leakage
 Hermetic Ceramic package
 TX, TXV, S level screening available
Maximum Ratings:
All ratings are at 25 ^oC unless otherwise noted
Characteristics
Symbol
Condition
Reverse Breakdown Voltage
V_BR
Per diode, Pulsed @ I_R = 5 A
Continuous Forward Current
P_w=300 s +/- 50µs; duty < 2%
I_F
Per diode, Derate at 2.4 mA/^oC
above 25 ^oC
Peak Surge Current
I_FSM
Per diode, tp=8.3 msec
Power Dissipation
P_D
Per Junction
Power Dissipation
P_D
Per Package, Derate at
4 mW/^oC above 25 ^oC
Max. Operating Temperature
T_J
-
Max. Storage Temperature
T_stg
-
Electrical Characteristics:
All ratings are per diode and at 25 ^oC unless otherwise noted
Characteristics
Symbol
Condition
Max. Forward Voltage Drop
V_F1
I_F = 100mA, Pulsed: P_w=300µs
+/- 50µs; duty cycle < 2%
Max. Reverse Current
Max. Capacitance (Pin to
Pin)
I_R1
@V_R = 40V
I_R2
@V_R = 20V
C_T
@V_R = 0V, F=1MHz
Max. Forward Recovery
Time
T_FR
I_F = 100mA
Max. Reverse Recovery
Time
T_RR
I_f = I_R = 10mA, i_RR = 1mA,
R_L = 100 ohms
Max. Forward Voltage Match
V_F5
I_f = 10mA
1N6510
Max.
75
300
500
400
500
-65 to +150
-65 to +200
Units
Vdc
mA
mA
mW
mW
C
C
Max.
1.00
0.1
25
4.0
15
10
5
Units
V
µA
nA
pF
ns
ns
mV
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