1N6508 Datasheet, PDF (1/3 Pages) Microsemi Corporation – MONOLITHIC AIR ISOLATED DIODE ARRAY

SENSITRON
SEMICONDUCTOR
1N6508
TECHNICAL DATA
DATA SHEET 4294, REV. -
Isolated Diode Array
Applications:
• High Frequency Data Lines
• RS-323 & RS-432 Networks
• LAN, Ethernet, I/O Ports
• IEC61000-4 compatible for ESD / EFT / Surge
Features:
• Protects up to 8 I/O Ports
• Isolated diodes eliminate crosstalk
• High Density Packaging
• High Breakdown Voltage; High Speed Switching (< 10 nsec)
• Low Capacitance; Low Leakage
• Hermetic Ceramic package
• TX, TXV, S level screening available
Maximum Ratings:
All ratings are at 25 ^oC unless otherwise noted
Characteristics
Symbol
Condition
Reverse Breakdown Voltage
V_BR
Per diode, Pulsed: PW = 100ms
max.; duty cycle < 20%
Continuous Forward Current
I_O
Per diode, Derate at 2.4mA/°C
above +25 °C
Peak Surge Current
I_FSM
Per diode, tp= 1/120 s
Power Dissipation
P_D
Per Junction, Derate at
4.0mW/°C above +25 °C
Power Dissipation
P_D
Per Package, Derate at
4.8 mW/^oC above 25 ^oC
Max. Operating Temperature
T_J
-
Max. Storage Temperature
T_stg
-
Electrical Characteristics:
All ratings are per diode and at 25 ^oC unless otherwise noted
Characteristics
Symbol
Condition
Pulsed: PW =
V_F1
300us +/-
50us, duty
If = 100mAdc
Max. Forward Voltage Drop
cycle < 2%,
V_F2
90us after
If = 500mAdc
leading edge
Max. Reverse Current
Max. Capacitance
(Pin to Pin)
I_R1
@V_R = 40V
C_T
@V_R = 0V, F=1MHz
Max. Forward Recovery
Time
T_FR
I_F = 500mA
Max. Reverse Recovery
Time
T_RR
If = IR = 200mAdc, irr =
20mAdc, RL = 100 ohms
Max.
60
300
500
400
600
-65 to +150
-65 to +200
Max.
1.00
1.50
0.1
8.0
40
20
Units
Vdc
mA
mA
mW
mW
°C
°C
Units
V
V
µA
pF
ns
ns
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