1N6101 Datasheet, PDF (1/2 Pages) Microsemi Corporation – MONOLITHIC AIR ISOLATED DIODE ARRAY

SENSITRON
SEMICONDUCTOR
1N6101
TECHNICAL DATA
DATA SHEET 4251, REV. -
Isolated Diode Array
Applications:
 High Frequency Data Lines
 RS-323 & RS-432 Networks
 LAN, Ethernet, I/O Ports
 IEC61000-4 compatible for ESD / EFT / Surge
Features:
 Protects up to 8 I/O Ports
 Isolated diodes eliminate crosstalk
 High Density Packaging
 High Breakdown Voltage; High Speed Switching (< 10 nsec)
 Low Capacitance; Low Leakage
 Hermetic Ceramic package
 TX, TXV, S level screening available
Maximum Ratings:
All ratings are at 25 ^oC unless otherwise noted
Characteristics
Symbol
Reverse Breakdown Voltage
V_BR
Continuous Forward Current
I_O
Peak Surge Current
I_FSM
Power Dissipation
P_D
Power Dissipation
P_D
Max. Operating Temperature
T_J
Max. Storage Temperature
T_stg
Condition
Per diode, Pulsed: PW = 100ms
max.; duty cycle < 20%
Per diode, Derate at 2.4mA/°C
above +25 °C
Per diode, tp= 1/120 s
Per Junction, Derate at
4.0mW/°C above +25 °C
Per Package, Derate at
4.8 mW/^oC above 25 ^oC
-
-
Electrical Characteristics:
All ratings are per diode and at 25 ^oC unless otherwise noted
Characteristics
Symbol
Condition
Max. Forward Voltage Drop
Pulsed: PW = 300us +/- 50us,
V_F1
duty cycle < 2%, 90us after
leading edge, If = 100mAdc
Max Forward Voltage Match
Max. Reverse Current
Max. Capacitance
(Pin to Pin)
Max. Forward Recovery
Time
Max. Reverse Recovery
Time
V_F5
If = 10mAdc
I_R1
@V_R = 40V
I_R2
@V_R = 20V
C_T
@V_R = 0V, F=1MHz
T_FR
I_F = 100mA
T_RR
If = IR = 100mAdc, irr = 1mAdc,
RL = 100 ohms
Max.
75
300
500
400
600
-65 to +150
-65 to +200
Max.
1.00
5
0.1
25
4.0
15
10
Units
Vdc
mA
mA
mW
mW
C
C
Units
V
mV
µA
nA
pF
ns
ns
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