1N5774 Datasheet, PDF (1/3 Pages) Microsemi Corporation – MONOLITHIC AIR ISOLATED DIODE ARRAY

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5153, REV. -
Isolated Diode Array
Applications:
• High Frequency Data Lines
• RS-233 & RS-422 Networks
• LAN, Ethernet, I/O Ports
• IEC61000-4 compatible for ESD / EFT / Surge
Features:
• Protects up to 8 I/O Ports
• Isolated diodes eliminate crosstalk
• High Density Packaging
• High Breakdown Voltage
• Low Capacitance; Low Leakage
• Hermetic Ceramic package
• TX, TXV, S level screening available
1N5774
Maximum Ratings:
All ratings are at 25 ^oC unless otherwise noted
Characteristics
Symbol
Condition
Reverse Breakdown Voltage
V_BR
Per diode @ 10 µA
Continuous Forward Current
I_O
Per diode, Derate at 2.4 mA/°C
above +25 °C
Peak Surge Current
I_FSM
Per diode, t_P = 8.3 msec
Power Dissipation
P_D
Per Junction, Derate at
4.0 mW/°C above +25 °C
Power Dissipation
P_D
Per Package, Derate at
4 mW/^oC above 25 ^oC
Max. Operating Temperature
T_J
-
Max. Storage Temperature
T_stg
-
Max.
60
300
500
400
500
-65 to +150
-65 to +200
Units
Vdc
mA
mA
mW
mW
°C
°C
Electrical Characteristics:
All ratings are per diode and at 25 ^oC unless otherwise noted
Characteristics
Symbol
Condition
Max. Forward Voltage Drop
V_F1
Pulsed
If = 100mAdc
PW = 300 µs
V_F2
If = 500mAdc
Max. Reverse Current
Max. Capacitance
(Pin to Pin)
Max. Forward Recovery
Time
Max. Reverse Recovery
Time
I_R1
@V_R = 40V
C_T
@V_R = 0V, f =1MHz
T_FR
I_F = 500mA
T_RR
I_F = I_R = 200 mA dc, I_RR = 20
mA dc, R_L = 100 ohms
Max.
1.00
1.50
0.1
8.0
40
20
Units
V
V
µA
pF
ns
ns
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