1C5806 Datasheet, PDF (1/2 Pages) Sensitron – ULTRA FAST RECOVERY SILICON RECTIFIER DIE

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 930, REV. C
ULTRA FAST RECOVERY
SILICON RECTIFIER DIE
1C5806
Maximum Ratings:
Characteristics
Peak Inverse Voltage
DC Blocking Voltage
Breakdown Voltage
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Die Size
Max. Junction Temperature
Max. Storage Temperature
Symbol
V_RWM
V_R
V_BR
I_F(AV)
I_FSM
-
T_J
T_stg
Condition
-
@ 55°C
8.3 ms, sine pulse ⁽¹⁾
-
-
-
Max.
150
1.0
35
40
-55 to +175
-55 to +175
Units
V
A
A
mil
°C
°C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Reverse Recovery Time
Max. Junction Capacitance
Symbol
V_F1
V_F2
V_F3
I_R1
I_R2
t_rr
C_T
Condition
1A, pulse, T_J = 25 °C
2.5A, pulse, T_J = 25 °C
1A, pulse, T_J = 100 °C
V_R = V_RWM, pulse, T_J = 25 °C
V_R = V_RWM, pulse, T_J = 100 °C
I_F = I_R = 0.5A , I_RM = 0.05A
V_R = 10V, T_C = 25 °C
f_SIG = 1MHz,
V_SIG = 50mV (p-p)
Max.
0.875
0.975
0.800
1.0
50
25
25
Units
V
V
V
µA
µA
ns
pF
• 221 West Industry Court  Deer Park, NY 11729-4681  [phone] FAX [phone] •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - [e-mail] •